Events

Dear Colleagues, GlobalFoundries has an open epitaxy position in Burlington, Vermont, United States of America: RF Technology Development Epitaxy and Integration Engineer – Principal Engineer. The role, within GlobalFoundries’ RF Technology Development Organization, focuses on developing, evaluating and qualifying CVD Si/SiGe epitaxial processes. Candidates should hold a Master’s or PhD in Electrical Engineering, Materials Science...

Dear Epitaxy Community,  We are searching for a motivated PhD candidate for the open position on ‘Strongly Correlated Epitaxial Niobate Oxynitride Thin Films for a New Type of Photovoltaics’.  The deadline is June 14th, 2026. Details and how to apply can be found here: https://www.uni-goettingen.de/de/644546.html?details=3320 More info here

Warsaw, Poland We are pleased to announce Symposium E: “Wide and ultra-wide-bandgap semiconductors challenges: from materials to applications” This symposium will bring together leading researchers to explore the latest advances in wide- and ultrawide-bandgap materials and heterostructures such as AlN and high-Al-content AlGaN; Ga2O3; Boron nitrides; Complex oxides (e.g. (ZnMg)O, (AlGa)2O3, GeO2 etc), Complex nitrides...

Dear colleagues, I would like to share an open postdoctoral research position at the Helmholtz-Zentrum Dresden-Rossendorf (HZDR) in collaboration with TU Dresden, funded by the German Aerospace Center (DLR). The project focuses on the development of electro-optical modulators for laser communication systems, aiming to enable efficient communication between low-orbit satellites and ground stations using modulating...

Dear Colleagues, CEA-IRIG (Grenoble, France) is currently hiring an outstanding early-career researcher for a permanent position in ultra-wide-bandgap semiconductors, with a focus on nitride and oxide materials. More info here.

Dear colleagues, A PhD position is open on single photon avalanche diodes based of Ge-on-Si heterostructures at at the Como campus of Politecnico di Milano, Italy. The Ph.D. project aims at designing, fabricating and characterizing a new generation of cost-effective single-photon avalanche diodes (SPADs) based on germanium-on-silicon (Ge-on-Si) epilayuers capable of detecting infrared radiation in...