Dear All,
Two PhD Thesis on “Selective area growth of GeSn for infrared photonic devices” and “Topological-superconductor group IV nanomaterials” were funded and are now available at CEA Grenoble in the PHELIQS group.
We are looking for two PhD students that will focus on developing new epitaxially-grown group IV materials using chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) tools. The two proposed thesis will characterize the structural properties of the fabricated materials down to the atomic level by combining X-ray Diffraction (XRD), Raman spectroscopy, Transmission Electron Microscopy (TEM), and Atom Probe Tomography (APT).
Moreover, in the first thesis offer on GeSn semiconductors, infrared photodetectors will be fabricated and their optoelectronic properties investigated using Photoluminescence, Absorption, and Photocurrent measurements.
In the second thesis offer on Sn nanomaterials, single nanowire FETs will be fabricated and their quantum transport properties will be investigated using magnetotransport measurements at cryogenic temperatures.
More info at these two links: GeSn semiconductors and Sn quantum materials.
Please, send your CV, motivation letter, and transcripts by e-mail to:
Dr. Simone ASSALI | Tel : 04 38 78 18 12
simone.assali@cea.fr