Giorgio Biasiol

MC Member
Consiglio Nazionale delle Ricerche, Istituto Officina dei Materiali
Country: Italy
Biography: Giorgio Biasiol received his B.S. degree in Physics at the University of Trieste, Italy in 1992, and his Ph.D. degree in Physics in 1998 at the Federal Institute of Technology, Lausanne, Switzerland. In 1999 he joined the TASC-INFM Laboratory in Trieste, Italy (now IOM-CNR), where he is currently Research director since 2020. His activity is mainly focused on the epitaxial growth by MBE and characterization of high mobility GaAs- and InGaAs-based modulation doped devices, photonic structures and radiation detectors, and of InAs/GaAs site-controlled, self-assembled quantum nanostructures. He is co-author of around two hundred papers on international scientific journals. He has been responsible for several research projects, and co-organizer of the 18th European Molecular Beam Epitaxy Workshop in 2015. In 1998 he was awarded of the Young Author Best Paper Award at the 24th ICPS Conference
Projects: H2020-FETOPEN-2018-2019-2020-01 GRANT_NUMBER: 828948 AndQC: "Andreev qubits for scalable quantum computation"H2020-FETOPEN-1-2016-2017 GRANT_NUMBER: 737017 MIR-Bose: “Mid- and far-IR optoelectronic devices based on Bose-Einstein condensation”