PhD position on single photon avalanche diodes based of Ge-on-Si heterostructures

PhD position on single photon avalanche diodes based of Ge-on-Si heterostructures

Dear colleagues,

A PhD position is open on single photon avalanche diodes based of Ge-on-Si heterostructures at at the Como campus of Politecnico di Milano, Italy.

The Ph.D. project aims at designing, fabricating and characterizing a new generation of cost-effective single-photon avalanche diodes (SPADs) based on germanium-on-silicon (Ge-on-Si) epilayuers capable of detecting infrared radiation in the short‑wave infrared (SWIR) range (λ=900-1600 nm).

The position is expected to begin on May 1st, 2026 (or as soon as possible thereafter) and will last three years, at the end of which candidates are expected to defend their PhD thesis.

For more details: https://euraxess.ec.europa.eu/jobs/408148

Where to apply : https://www.polimi.it/en/phd/prospective-phd-candidates/admission/calls-and-open-positions/41-cycle